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Proceedings Paper

Nanopulsed laser modification of Ge/Si heterostructures
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Paper Abstract

Laser-induced phase transitions in a-Ge/Si heterostructures (amorphous Ge films on crystalline Si substrate) have been studied by optical diagnostics and numerical simulation methods. The samples were irradiated by (i) a ruby laser with pulse duration 80 ns (FWHM) and wavelength 694 nm and (ii) an ArF excimer laser (10 ns and 193 nm). Time resolved reflectivity measurements showed the discrepancy in dynamics of reflectivity of probing beam for different regimes of laser irradiation. This discrepancy can be explained by differing kinetics of solid-liquid phase transitions in Ge films: (i) intermediate crystallization or (ii) simultaneous solidification of molten Ge layer from the surface and from the substrate.

Paper Details

Date Published: 14 May 2008
PDF: 5 pages
Proc. SPIE 7005, High-Power Laser Ablation VII, 70050U (14 May 2008); doi: 10.1117/12.782596
Show Author Affiliations
G. D. Ivlev, Institute of Physics (Belarus)
E. I. Gatskevich, Institute of Physics (Belarus)


Published in SPIE Proceedings Vol. 7005:
High-Power Laser Ablation VII
Claude R. Phipps, Editor(s)

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