Share Email Print
cover

Proceedings Paper

Option of resolution enhancement technology in advanced lithography
Author(s): Yanqui Li; Yuan Zhou
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Hyper-numerical aperture ArF scanner has being designed to meet the needs of 45nm node. Resolution enhancement technology, such as phase shift mask, off-axis illumination, and innovation processing technology must be employed in hyper-numerical aperture ArF lithography. However the cross talk of phase shift mask, off axis illumination, polarization effect, and resist stack impacts lithography performance significantly. Option of resolution enhancement technology is presented in conjunction with optimal dual-layers bottom anti-refactive coating and polarized illumination by our program and Prolith 9.0. Multi options of resolution enhancement technology are obtained to maintain a small CD, good CD uniformity (CDU), reasonable process window (PW) and fidelity of resist profile.

Paper Details

Date Published: 19 November 2007
PDF: 6 pages
Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67240G (19 November 2007); doi: 10.1117/12.782511
Show Author Affiliations
Yanqui Li, Beijing Institute of Technology (China)
Institute of Electrical Engineering (China)
Yuan Zhou, Institute of Electrical Engineering (China)
Graduate School of the Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 6724:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
Sen Han; Tingwen Xing; Yanqiu Li; Zheng Cui, Editor(s)

© SPIE. Terms of Use
Back to Top