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Proceedings Paper

Rapid nanofabrication with high density pattern with UVN30 chemically amplified resist
Author(s): Xudi Wang; Yifang Chen; Zheng Cui; Shaojun Fu
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Paper Abstract

As a chemically amplified resist, UVN30 has been evaluated for mask use in high density pattern rapid fabrication by electron beam lithography. This resist displays excellent sensitivity and reasonable resolution for dense features. At optimum conditions proximity effect is eliminated and 75 nm and 150 nm dense lines resolved in a 300 nm thick film with writing field of 1mm2. With UVN30 mask, Si nanostructures are etched by non-switch DRIE etch chemistry developed in this work, which achieves high etch rate and smooth sidewall. This method is a promising technique for fast speed fabrication of nanophotonics, nanochannels and Si master stamps for nanoimprint.

Paper Details

Date Published: 28 November 2007
PDF: 5 pages
Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67240A (28 November 2007); doi: 10.1117/12.782497
Show Author Affiliations
Xudi Wang, Hefei Univ. of Technology (China)
Yifang Chen, Rutherford Appleton Lab. (United Kingdom)
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)
Shaojun Fu, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 6724:
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
Sen Han; Tingwen Xing; Yanqiu Li; Zheng Cui, Editor(s)

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