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Proceedings Paper

An overview about the use of electrical doping of charge carrier transport layers in OLEDs and further organic electronic applications
Author(s): Senthilkumar Madasamy; Domagoj Pavicic; Carsten Rothe; Sven Murano; Jan Birnstock; Jan Blochwitz-Nimoth; Saso Mladenovski; Kristiaan Neyts; Martin Pfeiffer
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Paper Abstract

Electrical doping of organic layers is now a well established method for building highly efficient and long living OLEDs. A unique class of OLED devices called PIN-OLEDs based on redox doping technology is emerging as one key technology for OLED applications. These devices exhibit high power efficiency and long life time, which are critical parameters for commercial success. Moreover, PIN OLEDs offer high degree of freedom in choosing layer structures for optimizing the device performance for specific lighting and display applications. For example, optimizing color and power efficiency of OLEDs can be easily achieved without compromising the device operating voltage. It is worth to mention that PIN OLEDS, especially the red emitting PIN OLEDs, exhibit record breaking half life time of more than one million hours with the starting device brightness of 1000 cd/m2. The doping technology also offers benefits to other organic electronic devices such as OTFTs and photovoltaic devices. This paper briefly discusses the improvements made on the OLED device performance such as power efficiency and lifetime using doped transport layers. Few examples of device optimization using doped layers are presented in detail. In addition, a brief discussion on performance of doped transport layers in photovoltaics is also presented.

Paper Details

Date Published: 25 April 2008
PDF: 11 pages
Proc. SPIE 6999, Organic Optoelectronics and Photonics III, 69991E (25 April 2008); doi: 10.1117/12.782332
Show Author Affiliations
Senthilkumar Madasamy, Novaled AG (Germany)
Domagoj Pavicic, Novaled AG (Germany)
Carsten Rothe, Novaled AG (Germany)
Sven Murano, Novaled AG (Germany)
Jan Birnstock, Novaled AG (Germany)
Jan Blochwitz-Nimoth, Novaled AG (Germany)
Saso Mladenovski, Ghent Univ. (Belgium)
Kristiaan Neyts, Ghent Univ. (Belgium)
Martin Pfeiffer, Heliatek GmbH (Germany)


Published in SPIE Proceedings Vol. 6999:
Organic Optoelectronics and Photonics III
Paul L. Heremans; Michele Muccini; Eric A. Meulenkamp, Editor(s)

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