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Proceedings Paper

Optimization of the wall-plug efficiency of Al-free active region diode lasers at 975 nm
Author(s): N. Michel; M. Lecomte; O. Parillaud; M. Calligaro; J. Nagle; M. Krakowski
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Paper Abstract

We have developed two Al-free active region laser structures, which have a high maximum wall-plug efficiency (WPE) of 69% on an uncoated 2 mm x 100 μm single emitter broad area (BA) laser. Both structures include a Large Optical Cavity (LOC) with an optimized doping profile. One structure contains improved interfaces between material layers, and the other one an optimized strain compensated quantum well.

Paper Details

Date Published: 8 May 2008
PDF: 8 pages
Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69971W (8 May 2008); doi: 10.1117/12.781398
Show Author Affiliations
N. Michel, Alcatel-Thales III-V Lab. (France)
M. Lecomte, Alcatel-Thales III-V Lab. (France)
O. Parillaud, Alcatel-Thales III-V Lab. (France)
M. Calligaro, Alcatel-Thales III-V Lab. (France)
J. Nagle, Thales Research & Technology (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)


Published in SPIE Proceedings Vol. 6997:
Semiconductor Lasers and Laser Dynamics III
Krassimir P. Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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