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Proceedings Paper

Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes
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Paper Abstract

For broad ridge (Al,In)GaN laser diodes, which are inevitable for high output power applications in the UV and blue spectral range, filaments or higher order lateral modes build p, which influence the far-field beam quality. We investigate the lateral profile of the optical laser mode in the waveguide experimentally by temporal and spectral resolved scanning near-field optical microscopy measurements on electrically pulsed driven laser diodes and compare these results with one-dimensional simulations of the lateral laser mode in the waveguide. We present a model that describes the optical mode profile as a superposition of different lateral modes in a refractive index profile which is modified by carrier- and thermal-induced effects. In this way the mode dynamics on a nanosecond to microsecond time scale can be explained by thermal effects.

Paper Details

Date Published: 8 May 2008
PDF: 11 pages
Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69971U (8 May 2008); doi: 10.1117/12.781314
Show Author Affiliations
Harald Braun, Univ. of Regensburg (Germany)
Dominik Scholz, Univ. of Regensburg (Germany)
Tobias Meyer, Univ. of Regensburg (Germany)
Osram Opto Semiconductors GmbH (Germany)
Ulrich T. Schwarz, Univ. of Regensburg (Germany)
Désirée Queren, Osram Opto Semiconductors GmbH (Germany)
Marc Schillgalies, Osram Opto Semiconductors GmbH (Germany)
Stefanie Brüninghoff, Osram Opto Semiconductors GmbH (Germany)
Ansgar Laubsch, Osram Opto Semiconductors GmbH (Germany)
Uwe Strauß, Osram Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 6997:
Semiconductor Lasers and Laser Dynamics III
Krassimir P. Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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