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Impact of dry-etching induced damage in InP-based photonic crystals
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Paper Abstract

In this work variations of the carrier lifetime in a GaInAsP/InP quantum well in two-dimensional PhC structures etched by Ar/Cl2 chemically assisted ion beam etching as a function of the processing parameters is investigated. It is shown that the deposition conditions of the SiO2 mask material and its coverage as well as other process steps such as annealing affect the carrier lifetimes. However the impact of patterning the semiconductor on the carrier lifetime is dominant, showing over an order of magnitude reduction. For given PhC lattice parameters, the sidewall damage is shown to be directly related to the measured carrier lifetimes. A simple qualitative model based on sputtering theory and assuming a conical hole-shape development during etching is used to explain the experimental results.

Paper Details

Date Published: 6 May 2008
PDF: 10 pages
Proc. SPIE 6989, Photonic Crystal Materials and Devices VIII, 69890U (6 May 2008); doi: 10.1117/12.781231
Show Author Affiliations
Audrey Berrier, Royal Institute of Technology (Sweden)
Yaocheng Shi, Royal Institute of Technology (Sweden)
Jörg Siegert, Royal Institute of Technology (Sweden)
Saulius Marcinkevicius, Royal Institute of Technology (Sweden)
Sailing He, Royal Institute of Technology (Sweden)
Srinivasan Anand, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 6989:
Photonic Crystal Materials and Devices VIII
Richard M. De La Rue; Ceferino López; Michele Midrio; Pierre Viktorovitch, Editor(s)

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