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Proceedings Paper

Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal
Author(s): Satria Zulkarnaen Bisri; Taishi Takenobu; Yohei Yomogida; Takeshi Yamao; Masayuki Yahiro; Shu Hotta; Chihaya Adachi; Yoshihiro Iwasa
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Paper Abstract

Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

Paper Details

Date Published: 16 April 2008
PDF: 10 pages
Proc. SPIE 6999, Organic Optoelectronics and Photonics III, 69990Z (16 April 2008); doi: 10.1117/12.781126
Show Author Affiliations
Satria Zulkarnaen Bisri, Tohoku Univ. (Japan)
Taishi Takenobu, Tohoku Univ. (Japan)
CREST, Japan Science and Technology Corp. (Japan)
Yohei Yomogida, Tohoku Univ. (Japan)
Takeshi Yamao, Kyoto Institute of Technology (Japan)
Masayuki Yahiro, Kyushu Univ. (Japan)
Shu Hotta, Kyoto Institute of Technology (Japan)
Chihaya Adachi, Kyushu Univ. (Japan)
Yoshihiro Iwasa, Tohoku Univ. (Japan)
CREST, Japan Science and Technology Corp. (Japan)


Published in SPIE Proceedings Vol. 6999:
Organic Optoelectronics and Photonics III
Paul L. Heremans; Michele Muccini; Eric A. Meulenkamp, Editor(s)

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