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Proceedings Paper

Noise properties of semiconductor ring lasers
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Paper Abstract

We analyze a rate equation model in the Langevin formulation for the two modes of the electric field and the carrier density, modelling the spontaneous emission noise in a semiconductor ring laser biased in the bidirectional regime. We analytically investigate the influence of complex backscattering coefficient when the two modes are reinterpreted in terms of mode-intensity sum (I-Spectrum) and difference (D-spectrum). The D-spectrum represents the energy exchange between the two counterpropagating modes and it is shaped by the noisy precursor of a Hopf bifurcation influenced mainly by the conservative backscattering. The I-Spectrum reflects the energy exchange between the total field and the medium and behaves similarly to the standard relative intensity noise for single-mode semiconductor lasers. Good agreement between analytical approximation and numerical results is found.

Paper Details

Date Published: 19 May 2008
PDF: 8 pages
Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69971Q (19 May 2008); doi: 10.1117/12.780985
Show Author Affiliations
Antonio Pérez S., Univ. Illes Balears (Spain)
Roberta Zambrini, Univ. Illes Balears (Spain)
Alessandro Scirè, Univ. Illes Balears (Spain)
Pere Colet, Univ. Illes Balears (Spain)

Published in SPIE Proceedings Vol. 6997:
Semiconductor Lasers and Laser Dynamics III
Krassimir P. Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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