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Proceedings Paper

Silicon phototransistor reliability assessment and new selection strategies for space applications
Author(s): Piero Spezzigu; Laurent Bechou; Gianandrea Quadri; Olivier Gilard; Yannick Deshayes; Yves Ousten; Massimo Vanzi
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Paper Abstract

The reliability of bipolar silicon-based phototransistors was investigated through evaluation tests for space applications. First of all a preliminary evaluation program including thermal cycling, vibrations and shocks test, radiation test and high-temperature operating life test was carried out to assess the overall quality of these phototransistors. During life test abnormal fluctuations of phototransistors collector current measured under constant illumination have been observed. In order to solve this problem, a failure analysis was conducted. Mobile charges located in the photobase passivation layer were found to be at the origin of these fluctuations. Based on these results a new methodology for device selection was proposed to achieve, despite to that issue, high reliability in operating conditions.

Paper Details

Date Published: 26 April 2008
PDF: 9 pages
Proc. SPIE 7003, Optical Sensors 2008, 70030O (26 April 2008); doi: 10.1117/12.780976
Show Author Affiliations
Piero Spezzigu, IMS Lab., Univ. Bordeaux I, CNRS (France)
Univ. degli Studi di Cagliari (Italy)
Laurent Bechou, IMS Lab., Univ. Bordeaux I, CNRS (France)
Gianandrea Quadri, Ctr. National d'Études Spatiales (France)
Olivier Gilard, Ctr. National d'Études Spatiales (France)
Yannick Deshayes, IMS Lab., Univ. Bordeaux I, CNRS (France)
Yves Ousten, IMS Lab., Univ. Bordeaux I, CNRS (France)
Massimo Vanzi, Univ. degli Studi di Cagliari (Italy)


Published in SPIE Proceedings Vol. 7003:
Optical Sensors 2008
Francis Berghmans; Anna Grazia Mignani; Antonello Cutolo; Patrick P. Meyrueis; Thomas P. Pearsall, Editor(s)

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