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Proceedings Paper

3.5 W GaInNAs disk laser operating at 1220 nm
Author(s): Mircea Guina; Ville-Markus Korpijärvi; Jussi Rautiainen; Pietari Tuomisto; Janne Puustinen; Antti Härkönen; Oleg Okhotnikov
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Paper Abstract

We report an essential progress towards the development of efficient GaInNAs-based semiconductor disk lasers operating at 1220 nm spectral range. The gain mirrors were fabricated by molecular beam epitaxy using a radio frequency plasma source for incorporating the nitrogen. The typical structure consisted of a 30-pair GaAs/AlAs distributed Bragg reflector and 10 GaInNAs quantum wells with relatively low content of nitrogen. The growth parameters and the composition of the structures have been optimized to reduce the detrimental effect of nitrogen on the emission efficiency. We have achieved a maximum output power of 3.5 W and a differential efficiency of 20%.

Paper Details

Date Published: 8 May 2008
PDF: 8 pages
Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69970Q (8 May 2008); doi: 10.1117/12.780953
Show Author Affiliations
Mircea Guina, Tampere Univ. of Technology (Finland)
Ville-Markus Korpijärvi, Tampere Univ. of Technology (Finland)
Jussi Rautiainen, Tampere Univ. of Technology (Finland)
Pietari Tuomisto, EpiCrystals, Inc. (Finland)
Janne Puustinen, Tampere Univ. of Technology (Finland)
Antti Härkönen, Tampere Univ. of Technology (Finland)
Oleg Okhotnikov, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 6997:
Semiconductor Lasers and Laser Dynamics III
Krassimir P. Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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