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Proceedings Paper

Modelling strategies for semiconductor ring lasers
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Paper Abstract

We have analyzed experimentally and theoretically the modal properties of a semiconductor ring laser and the wavelength jumps that occur in connection with directional switching above threshold. A transfer matrix analysis allow us to explain the transfer function measurements when amplified spontaneous emission in the cavity is accounted for. Moreover the transfer matrix analysis permits to determine the threshold condition for the laser modes, which split in two branches due to the symmetry breaking imposed by the output coupler and output waveguides. The wavelength jumps displayed by the device above threshold are interpreted with the frequency splitting and threshold difference between these two branches of solutions, together with the redshift of the material gain.

Paper Details

Date Published: 19 May 2008
PDF: 7 pages
Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69971N (19 May 2008); doi: 10.1117/12.780847
Show Author Affiliations
Antonio Pérez S., Univ. Illes Balears (Spain)
Sandor Fürst, Univ. of Glasgow (United Kingdom)
Alessandro Scirè, Univ. Illes Balears (Spain)
Julien Javaloyes, Univ. Illes Balears (Spain)
Salvador Balle, Univ. Illes Balears (Spain)
Marc Sorel, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 6997:
Semiconductor Lasers and Laser Dynamics III
Krassimir P. Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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