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Proceedings Paper

Energy characteristics of excitons in InGaN/GaN heterostructures
Author(s): S. O. Usov; A. F. Tsatsul'nikov; W. V. Lundin; A. V. Sakharov; E. E. Zavarin; M. A. Sinitsyn; N. N. Ledentsov
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Paper Abstract

The structure and optical properties of the heterostructures, which contain an ultra-thin InGaN layers with GaN or AlGaN barriers, grown by MOCVD method were investigated by photoluminescence and high resolution X-ray diffraction (HRXRD) tehnigue. The exciton localization energy, Urbah energy and charge carries activation energies were obtained from analysis of the temperature dependences of the photoluminescence spectra for the In-rich areas (QDs). In these structures the In-rich areas are shown to appear in ultrathin InGaN layers due to phase decomposition. That leads to exciton and carrier localization in fluctuation minima, which prevents them from tranport to nonradiative recombination centres. The indium composition in the InGaN QDs were obtained using theoretical model, which describes the electron transition energy as a function of In-rich areas parameters. The parameters such as deformation of InGaN/GaN region and layer thickness were determined from HRXRD. The suggested approach is supposed to be effective method for analysis of the optical properties of InGaN/GaN heterostructures.

Paper Details

Date Published: 25 April 2008
PDF: 12 pages
Proc. SPIE 6995, Optical Micro- and Nanometrology in Microsystems Technology II, 699515 (25 April 2008); doi: 10.1117/12.780789
Show Author Affiliations
S. O. Usov, A.F. Ioffe Physico-Technical Institute (Russia)
A. F. Tsatsul'nikov, A.F. Ioffe Physico-Technical Institute (Russia)
W. V. Lundin, A.F. Ioffe Physico-Technical Institute (Russia)
A. V. Sakharov, A.F. Ioffe Physico-Technical Institute (Russia)
E. E. Zavarin, A.F. Ioffe Physico-Technical Institute (Russia)
M. A. Sinitsyn, St. Petersburg Physico-Technical Ctr. (Russia)
N. N. Ledentsov, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 6995:
Optical Micro- and Nanometrology in Microsystems Technology II
Christophe Gorecki; Anand Krishna Asundi; Wolfgang Osten, Editor(s)

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