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Proceedings Paper

Study of crystallization and phase mixing in SiO2/SiOx superlattices through form birefringence measurements
Author(s): Mher Ghulinyan; Minghua Wang; Antonino Picciotto; Georg Pucker
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Paper Abstract

We report on the evolution of form birefringence due to thermal annealing in SiOx/SiO2 superlattices (SL) deposited by Plasma enhanced chemical vapor deposition (PECVD). Superlattices with layer thickness of 5 or 8 nm for both the SiOx and SiO2 layers were annealed at different temperatures from RT to 1150°C. Variable angle spectroscopic ellipsometry (VASE) was used to measure the negative form birefringence β and total thickness of the superlattice. The evolution of the ordinary (n0) and extraordinary (ne) refractive indices, the form birefringence and the thickness can be correlated with processes like sintering, phase separation in the SiOx-layers and roughening of the SiO2/SiOx interface.

Paper Details

Date Published: 1 May 2008
PDF: 6 pages
Proc. SPIE 6996, Silicon Photonics and Photonic Integrated Circuits, 69960G (1 May 2008); doi: 10.1117/12.780547
Show Author Affiliations
Mher Ghulinyan, MTLab (Italy)
Minghua Wang, Zhejiang Univ. (China)
Antonino Picciotto, MTLab (Italy)
Georg Pucker, MTLab (Italy)


Published in SPIE Proceedings Vol. 6996:
Silicon Photonics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo K. Honkanen; Lorenzo Pavesi; Laurent Vivien, Editor(s)

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