Share Email Print
cover

Proceedings Paper

nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices
Author(s): E. Plis; H. S. Kim; J. B. Rodriguez; G. D. Bishop; Y. D. Sharma; A. Khoshakhlagh; L. R. Dawson; J. Bundas; R. Cook; D. Burrows; R. Dennis; K. Patnaude; A. Reisinger; M. Sundaram; S. Krishna
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The development of type-II InAs/(In,Ga)Sb superlattice (SL) detectors with nBn design for single-color and dual-color operation in MWIR and LWIR spectral regions are discussed. First, a 320 x 256 focal plane array (FPA) with cutoff wavelength of 4.2 μm at 77K with average value of dark current density equal to 1 x 10-7 A/cm2 at Vb=0.7V (77 K) is reported. FPA reveals NEDT values of 23.8 mK for 16.3 ms integration time and f/4 optics. At 77K, the peak responsivity and detectivity of FPA are estimated, respectively, to be 1.5 A/W and 6.4 x 1011 Jones, at 4 μm. Next, implementation of the nBn concept on design of SL LWIR detectors is presented. The fabrication of single element nBn based long wave infrared (LWIR ) with λc ~ 8.0 μm at Vb = +0.9 V and T = 100K detectors are reported. The bias dependent polarity can be exploited to obtain two color response (λc1 ~ 3.5 μm and λc2 ~ 8.0 μm) under different polarity of applied bias. The design and fabrication of this two color detector is presented. The dual band response (λc1 ~ 4.5 μm and λc2 ~ 8 μm) is achieved by changing the polarity of applied bias. The spectral response cutoff wavelength shifts from MWIR to LWIR when the applied bias voltage varies within a very small bias range (~100 mV).

Paper Details

Date Published: 2 May 2008
PDF: 10 pages
Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69400E (2 May 2008); doi: 10.1117/12.780375
Show Author Affiliations
E. Plis, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
H. S. Kim, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
J. B. Rodriguez, Institut d'Electronique du Sud (IES), UMR CNRS 5214, Univ. Montpellier II (France)
G. D. Bishop, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Y. D. Sharma, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
A. Khoshakhlagh, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
L. R. Dawson, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
J. Bundas, QmagiQ, LLC (United States)
R. Cook, QmagiQ, LLC (United States)
D. Burrows, QmagiQ, LLC (United States)
R. Dennis, QmagiQ, LLC (United States)
K. Patnaude, QmagiQ, LLC (United States)
A. Reisinger, QmagiQ, LLC (United States)
M. Sundaram, QmagiQ, LLC (United States)
S. Krishna, Ctr. for High Technology Materials, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6940:
Infrared Technology and Applications XXXIV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

© SPIE. Terms of Use
Back to Top