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Proceedings Paper

Investigation of intensity and spectrum of silicon nanowires by ESR
Author(s): Li Wang; Haoxin Zhang; Rongping Wang
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Paper Abstract

The signal intensity and spectrum of electron-spin resonance (ESR) has been observed in silicon nanowires (SiNW's) and nano-crystalline silicon structure based on JEOL system model FA-100 at around 9.4GHz, microwave modulation frequency was stabilized at 100KHz. The over-saturation behaviors of signal intensity of ESR in different diameters of SiNW's by observing the microwave power and analyzing the oxidation related, room temperature (RT) and 77K dependences of ESR spectrum in different magnetic fields and microwave powers have been ascribed that they come from the different defects. The defects have existed in silicon-based materials using physical behaviors of the signal intensity of ESR we have obtained because of the influence of temperature dependences, different microwave powers and oxidized sample for SiNW's.

Paper Details

Date Published: 1 November 2007
PDF: 6 pages
Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 642350 (1 November 2007); doi: 10.1117/12.780317
Show Author Affiliations
Li Wang, Beijing Univ. of Technology (China)
Australian National Univ. (Australia)
Haoxin Zhang, Xi'an Jiaotong Univ. (China)
Rongping Wang, Australian National Univ. (Australia)


Published in SPIE Proceedings Vol. 6423:
International Conference on Smart Materials and Nanotechnology in Engineering

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