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Proceedings Paper

Diode pumped Er:YVO4 microchip laser
Author(s): Helena Jelínková; Jan Šulc; Witold Ryba-Romanowski; Tadeusz Lukasiewicz
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Paper Abstract

Characterization of diode pumped Er:YVO4 microchip laser working in an "eye-safe" spectral region is done. Two active materials for microchip laser based on Er:YVO4 and Er:YVO4 + CaO crystals were investigated. The dimension of the microchips was in both cases the same: an aperture 8.3 x 10.4 mm and thickness 2.9 mm. The concentration of active ions Er3+ was 0.5 at% in both samples and 0.6at% CaO was added to Er:YVO4 + CaO crystal. The resonator mirrors were deposited directly on the crystal faces: a rear mirror was HR for the 1.6 μm wavelength and HT for 0.97 μm pumping radiation and as the output coupler a dielectric coatings with the 0.5% transmission at 1.6 μm wavelength was prepared. As a pumping source a fiber coupled (core diameter-200 μm) laser diode emitting radiation at wavelength 0.976 μm was used. Laser diode was operating in pulsed regime (pulse width 3 ms, repetition rate 20 Hz, maximum mean pumping power 1.13 W). The diode radiation was focused into the uncooled microchip sample by two achromatic doublet lenses with the focal length of 75 mm. As the result 175 mW and 152 mW output peak powers were obtained for the Er:YVO4 and Er:YVO4 + CaO, respectively. The laser emission was observed in detail in range 1.529 μm up to 1.604 μm for Er:YVO4 microchip in dependence on pumping conditions. For Er:YVO4 + CaO crystal 1.6041 μm was generated only. Up-conversion radiation for both materials in dependence on pumping was also studied.

Paper Details

Date Published: 16 April 2008
PDF: 7 pages
Proc. SPIE 6998, Solid State Lasers and Amplifiers III, 699817 (16 April 2008); doi: 10.1117/12.780020
Show Author Affiliations
Helena Jelínková, Czech Technical Univ. (Czech Republic)
Jan Šulc, Czech Technical Univ. (Czech Republic)
Witold Ryba-Romanowski, Institute of Low Temperature and Structure Research (Poland)
Tadeusz Lukasiewicz, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 6998:
Solid State Lasers and Amplifiers III
Jonathan A. Terry; Thomas Graf; Helena Jelínková, Editor(s)

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