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Proceedings Paper

The influence of doping concentration on piezoresistive temperature characteristics of polysilicon nanofilms
Author(s): Xiaowei Liu; Xuebin Lu; Rongyan Chuai; Huiyan Pan; Xilian Wang; Jinfeng Li
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Paper Abstract

Compared with ordinary polysilicon films and monocrystalline silicon, heavy doped polysilicon nanofilms have better piezoresistive properties and better temperature characteristics. Therefore, pressure sensors made of polysilicon nanofilms will have many corresponding advantages, including high sensitivity and complete self-compensation of temperature coefficients. In this paper, the influence of doping concentration on temperature coefficient of resistance (TCR) and temperature coefficient of gauge factor (TCGF) is deeply studied to optimize doping concentration in order to make temperature coefficients lowest. TCR and TCGF of samples with doping concentration of 4.1×1019cm-3, 1.0×1020cm-3, 2.0×1020cm-3, 4.1×1020cm-3, 7.1×1020cm-3 are tested at temperature range 23°C to 270°C, respectively, and the microstructures of the samples are also observed by the method of scanning electron microscopy (SEM) and transmission electron microscope (TEM). The experimental results have been explained reasonably based on the tunneling piezoresistive theory proposed before. Based on both experimental results and theoretical analyses, to obtain a zero value of TCR and a low value -0.1%/°C of TCGF, the optimal doping concentration of the films of 80nm thickness should be about 3×1020cm-3.

Paper Details

Date Published: 13 November 2007
PDF: 7 pages
Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 64232N (13 November 2007); doi: 10.1117/12.779870
Show Author Affiliations
Xiaowei Liu, Harbin Institute of Technology (China)
Xuebin Lu, Harbin Institute of Technology (China)
Rongyan Chuai, Harbin Institute of Technology (China)
Shenyang Univ. of Technology (China)
Huiyan Pan, Harbin Institute of Technology (China)
Xilian Wang, Harbin Institute of Technology (China)
Jinfeng Li, Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 6423:
International Conference on Smart Materials and Nanotechnology in Engineering

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