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Proceedings Paper

Tm-doped vanadates under pulsed pumping with variable duty-cycle: impact on lasing and fluorescence
Author(s): Jan Šulc; Pavel Černý; Helena Jelínková; Witold Ryba-Romanowski; Radoslaw Lisiecki; Piotr Solarz; Grazina Dominiak-Dzik; Yoshiharu Urata; Mikio Higuchi
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Paper Abstract

Lasing and fluorescence behavior of thulium doped YVO4, GdVO4, and LuVO4 single crystals were investigated under pulsed pumping with variable duty cycle up to CW. This allowed us to study properties of these crystals in dependence on thermal load in a broad range. Following crystals were investigated: Tm:YVO4 (5 at.% Tm/Y, grown by the Czochralski technique), Tm:GdVO4 (2, 4, and 6 at.% Tm/Gd, grown by the floating-zone technique), and Tm:LuVO4 (3 at.% Tm/Y, grown by the floating-zone technique). For pumping a fibre-coupled (core diameter 400 μm) laser diode operating in range from 800 up to 803nm was used (available CW power 20 W). All tested crystals were investigated under CW and pulsed pumping (pulse length 4 ms). Under pulsed pumping (4% duty cycle), the lasing was demonstrated with all samples. Under CW pumping only Tm:GdVO4 crystal was lasing. For Tm:YVO4 and Tm:LuVO4 crystals, a lasing was not reached for pumping with duty cycle higher than 60 %, and the strong blue emission was observed. Detailed measurement of visible emission for broad range of pumping duty cycles (from 4 up to 60%) showed the exponential increase of Tm3+ integral emission intensity in bands around 480 and 700 nm. Comparison with the results obtained for fixed duty cycle and variable crystal holder temperature (290 - 310 K) allowed us to find a relation between the duty cycle and temperature of pumped part of the crystal. Measurement of infrared fluorescence temporal behavior in dependence on duty cycle gives us possibility to study a relative population of lasing level in dependence on temperature.

Paper Details

Date Published: 22 April 2008
PDF: 11 pages
Proc. SPIE 6998, Solid State Lasers and Amplifiers III, 69980T (22 April 2008); doi: 10.1117/12.779298
Show Author Affiliations
Jan Šulc, Czech Technical Univ. (Czech Republic)
Pavel Černý, Czech Technical Univ. (Czech Republic)
Helena Jelínková, Czech Technical Univ. (Czech Republic)
Witold Ryba-Romanowski, Institute of Low Temperature and Structure Research (Poland)
Radoslaw Lisiecki, Institute of Low Temperature and Structure Research (Poland)
Piotr Solarz, Institute of Low Temperature and Structure Research (Poland)
Grazina Dominiak-Dzik, Institute of Low Temperature and Structure Research (Poland)
Yoshiharu Urata, Megaopto Co., Ltd. (Japan)
Mikio Higuchi, Hokkaido Univ. (Japan)

Published in SPIE Proceedings Vol. 6998:
Solid State Lasers and Amplifiers III
Jonathan A. Terry; Thomas Graf; Helena Jelínková, Editor(s)

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