Share Email Print
cover

Proceedings Paper

Advanced ROICs design for cooled IR detectors
Author(s): Michel Zécri; Patrick Maillart; Eric Sanson; Gilbert Decaens; Xavier Lefoul; Laurent Baud
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The CMOS silicon focal plan array technologies hybridized with infrared detectors materials allow to cover a wide range of applications in the field of space, airborne and grounded-based imaging. Regarding other industries which are also using embedded systems, the requirements of such sensor assembly can be seen as very similar; high reliability, low weight, low power, radiation hardness for space applications and cost reduction. Comparing to CCDs technology, excepted the fact that CMOS fabrication uses standard commercial semiconductor foundry, the interest of this technology used in cooled IR sensors is its capability to operate in a wide range of temperature from 300K to cryogenic with a high density of integration and keeping at the same time good performances in term of frequency, noise and power consumption. The CMOS technology roadmap predict aggressive scaling down of device size, transistor threshold voltage, oxide and metal thicknesses to meet the growing demands for higher levels of integration and performance. At the same time infrared detectors manufacturing process is developing IR materials with a tunable cut-off wavelength capable to cover bandwidths from visible to 20μm. The requirements of third generation IR detectors are driving to scaling down the pixel pitch, to develop IR materials with high uniformity on larger formats, to develop Avalanche Photo Diodes (APD) and dual band technologies. These needs in IR detectors technologies developments associated to CMOS technology, used as a readout element, are offering new capabilities and new opportunities for cooled infrared FPAs. The exponential increase of new functionalities on chip, like the active 2D and 3D imaging, the on chip analog to digital conversion, the signal processing on chip, the bicolor, the dual band and DTI (Double Time Integration) mode ...is aiming to enlarge the field of application for cooled IR FPAs challenging by the way the design activity.

Paper Details

Date Published: 1 May 2008
PDF: 12 pages
Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69402X (1 May 2008); doi: 10.1117/12.779286
Show Author Affiliations
Michel Zécri, SOFRADIR (France)
Patrick Maillart, SOFRADIR (France)
Eric Sanson, SOFRADIR (France)
Gilbert Decaens, SOFRADIR (France)
Xavier Lefoul, SOFRADIR (France)
Laurent Baud, SOFRADIR (France)


Published in SPIE Proceedings Vol. 6940:
Infrared Technology and Applications XXXIV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

© SPIE. Terms of Use
Back to Top