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Proceedings Paper

Growth of iron films on silicon: effect of the deposition rate
Author(s): A. S. Gouralnik; N. G. Galkin; V. I. Ivanov
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Paper Abstract

Growth and magnetism of thin iron films on the surfaces Si(100), Si(111) and Si(111)-4° are studied by in situ SMOKE and ex-situ AFM methods. Comparison of growth modes for slow and ultra-fast deposition is given. Design of the pulse-type ultra-fast evaporator is described.

Paper Details

Date Published: 13 November 2007
PDF: 7 pages
Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 64230F (13 November 2007); doi: 10.1117/12.779221
Show Author Affiliations
A. S. Gouralnik, Institute for Automation and Control Processes (Russia)
N. G. Galkin, Institute for Automation and Control Processes (Russia)
Far-East State Univ. (Russia)
V. I. Ivanov, Far-East State Univ. (Russia)


Published in SPIE Proceedings Vol. 6423:
International Conference on Smart Materials and Nanotechnology in Engineering

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