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Proceedings Paper

Crystallization and compositional changes in amorphous PECVD SiNx thin films
Author(s): Neerushana Jehanathan; Martin Saunders; Yinong Liu; John Dell
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Paper Abstract

This study investigates the crystallization and compositional changes in amorphous silicon nitride (SiNx) thin films induced by heat treatment at elevated temperatures in air. The films were synthesized by plasma enhanced chemical vapor deposition (PECVD) method. It is found that PECVD SiNx films crystallize at 1148 K, which is much lower than that reported in the literature for silicon nitride powders and thin films. The crystallization occurs in the form of small silicon nitride crystal clusters scattered in the film, while the rest of the film partially oxidizes to amorphous silicon oxynitride. The crystallized silicon nitride is found to be α-Si3N4.

Paper Details

Date Published: 1 November 2007
PDF: 8 pages
Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 64230C (1 November 2007); doi: 10.1117/12.779215
Show Author Affiliations
Neerushana Jehanathan, The Univ. of Western Australia (Australia)
Martin Saunders, The Univ. of Western Australia (Australia)
Yinong Liu, The Univ. of Western Australia (Australia)
John Dell, The Univ. of Western Australia (Australia)


Published in SPIE Proceedings Vol. 6423:
International Conference on Smart Materials and Nanotechnology in Engineering

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