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Proceedings Paper

A novel hinged micromachined high-g piezoresistive accelerometer
Author(s): Kebin Fan; Bin Xiong; Lufeng Che; Yuelin Wang
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Paper Abstract

A novel silicon micromachined hinged high-g piezoresistive accelerometer with wide bandwidth is presented. The sensitivity of this accelerometer can be improved while maintaining a high resonance frequency. Based on the simulation of the finite element method, design parameters are obtained for a natural resonance frequency of 573kHz for a large range of 200,000g. The high-g accelerometer is fabricated by advanced silicon bulk micromachining technology. By using a dropping-hammer testing system, characterization measurements show a sensitivity of 0.502μV/g for a 30646g shock acceleration under the 5V excitation.

Paper Details

Date Published: 1 November 2007
PDF: 8 pages
Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 642306 (1 November 2007); doi: 10.1117/12.779134
Show Author Affiliations
Kebin Fan, Shanghai Institute of Microsystem and Information Technology (China)
Bin Xiong, Shanghai Institute of Microsystem and Information Technology (China)
Lufeng Che, Shanghai Institute of Microsystem and Information Technology (China)
Yuelin Wang, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 6423:
International Conference on Smart Materials and Nanotechnology in Engineering

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