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Proceedings Paper

Monolithically integrated InGaAsP/InP 1x2 SOA optical switch
Author(s): Ronald Millett; Trevor Hall; Karin Hinzer; Valery Tolstikhin; Kirill Pimenov; Yury Logvin; Brad Robinson; Zhilin Peng; Henry Schriemer
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Paper Abstract

This paper describes a monolithically integrated 1x2 SOA-based switch in InGaAsP/InP. It can be fabricated in one epitaxial growth step, has a footprint of only 4.2mm x 0.35mm, operates on sub-ns time scales and is meant to be integrated with other passive and active waveguide devices on the same InP substrate. The design process optimized the device dimensions using a modified finite-element modal-overlap method. This method provides significant computational savings compared to full beam-propagation method (BPM) simulations. The device uses a single-mode vertical integration technique for a monolithic integration of active and passive waveguide components. To compensate for the polarization sensitivity, tensile-strained quantum well active regions are used. To switch a signal to an output waveguide, the SOA in that waveguide is forward-biased while the SOA in the other output waveguide is reverse-biased to provide a large attenuation (>30dB), resulting in minimal crosstalk. This switch has an estimated insertion loss of 4dB, with a polarization dependent loss of < 1dB.

Paper Details

Date Published: 26 October 2007
PDF: 12 pages
Proc. SPIE 6796, Photonics North 2007, 67962Y (26 October 2007); doi: 10.1117/12.778938
Show Author Affiliations
Ronald Millett, Univ. of Ottawa (Canada)
Trevor Hall, Univ. of Ottawa (Canada)
OneChip Photonics Inc. (Canada)
Karin Hinzer, Univ. of Ottawa (Canada)
Valery Tolstikhin, OneChip Photonics Inc. (Canada)
Kirill Pimenov, OneChip Photonics Inc. (Canada)
Yury Logvin, OneChip Photonics Inc. (Canada)
Brad Robinson, McMaster Univ. (Canada)
Zhilin Peng, McMaster Univ. (Canada)
Henry Schriemer, Univ. of Ottawa (Canada)

Published in SPIE Proceedings Vol. 6796:
Photonics North 2007
John Armitage, Editor(s)

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