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Proceedings Paper

Ion implanted integrated Bragg gratings in SOI waveguides
Author(s): M. P. Bulk; A. P. Knights; P. E. Jessop
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Paper Abstract

We report the realization of a Bragg grating optical filter at telecommunication wavelengths in silicon-on-insulator (SOI) through the use of ion implantation induced refractive index modulation. Silicon self-irradiation damage accumulation results in an increase of the refractive index to a saturated value, upon amorphization, of approximately 3.75. This makes it an interesting candidate for passive gratings as the silicon retains a planar surface, making it ideal for further processing. Monte Carlo simulations and coupled mode theory demonstrate the viability of the approach. Planar implanted SOI waveguides showed extinction ratios of -5 dB for TE and -2 dB for TM. An annealing study suggests complete amorphization was not achieved and future results should be improved dramatically.

Paper Details

Date Published: 26 October 2007
PDF: 9 pages
Proc. SPIE 6796, Photonics North 2007, 67961C (26 October 2007); doi: 10.1117/12.778738
Show Author Affiliations
M. P. Bulk, McMaster Univ. (Canada)
A. P. Knights, McMaster Univ. (Canada)
P. E. Jessop, McMaster Univ. (Canada)

Published in SPIE Proceedings Vol. 6796:
Photonics North 2007
John Armitage, Editor(s)

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