Share Email Print
cover

Proceedings Paper

Optical transition pathways in type-II Ga(As)Sb quantum dots
Author(s): T. J. Ochalski; K. Gradkowski; D. P. Williams; E. P. O'Reilly; G. Huyet; J. Tatebayashi; A. Khoshakhlagh; G. Balakrishnan; L. R. Dawson; D. L. Huffaker
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We present results of room temperature photoreflectance and photoluminescence measurements of molecular-beam epitaxy (MBE) grown GaAsSb/GaAs quantum dot structures. Structures with different electron confinement have been analysed and, using an 8-band k•p Hamiltonian, the main optical pathways were identified. The dot emission energies are much higher than expected for pure GaSb dots, suggesting a large amount of As incorporation into the dots, which is due to enhanced adatom mixing at a higher than normal growth temperature of 510°C. Our calculations indicate a dot composition of 25%-50% Sb gives the best fit to experiment.

Paper Details

Date Published:
PDF
Proc. SPIE 6902, Quantum Dots, Particles, and Nanoclusters V, 69020H; doi: 10.1117/12.778557
Show Author Affiliations
T. J. Ochalski, Tyndall National Institute (Ireland)
K. Gradkowski, Tyndall National Institute (Ireland)
D. P. Williams, Tyndall National Institute (Ireland)
E. P. O'Reilly, Tyndall National Institute (Ireland)
G. Huyet, Tyndall National Institute (Ireland)
J. Tatebayashi, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
A. Khoshakhlagh, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
G. Balakrishnan, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
L. R. Dawson, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
D. L. Huffaker, Ctr. for High Technology Materials, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6902:
Quantum Dots, Particles, and Nanoclusters V
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

© SPIE. Terms of Use
Back to Top