Share Email Print
cover

Proceedings Paper

High-power and high-energy stability injection lock laser light source for double exposure or double patterning ArF immersion lithography
Author(s): Masaya Yoshino; Hiroaki Nakarai; Takeshi Ohta; Hitoshi Nagano; Hiroshi Umeda; Yasufumi Kawasuji; Toru Abe; Ryoichi Nohdomi; Toru Suzuki; Satoshi Tanaka; Yukio Watanabe; Taku Yamazaki; Shinji Nagai; Osamu Wakabayashi; Takashi Matsunaga; Kouji Kakizaki; Junichi Fujimoto; Hakaru Mizoguchi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

ArF immersion technology is spotlighted as the enabling technology for below 45nm node. Recently, double exposure technology is also considered for below 32nm node. We have already released an injection lock ArF excimer laser with ultra-line narrowed and stabilized spectrum performance: GT61A (60W/6kHz/ 10mJ/0.35pm) to ArF immersion market in Q4 2006. The requirements are: i) higher power ii) lower cost of downtime for higher throughput iii) greater wavelength stability for improved overlay and iv) increased lifetimes for lower operation costs. We have developed high power and high energy stability injection lock ArF excimer laser for double patterning: GT62A (90W/6000Hz/15mJ/0.35pm) based on the technology of GT61A and the reliability of GigaTwin (GT) platform. A high power operation of 90W is realized by development of high durability optical elements. Durability of the new optics is at least 3 times as long as that of the conventional optics used in the GT61A. The energy stability is improved more than 1.5 times of performance in the GT61A by optimizing laser operational conditions of the power oscillator. This improvement is accomplished by extracting potential efficiency of injection lock characteristic. The lifetime of power oscillator, which is one of the major parts in cost of ownership, is maintained by using higher output of the power supply.

Paper Details

Date Published: 11 April 2008
PDF: 10 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69242S (11 April 2008); doi: 10.1117/12.778430
Show Author Affiliations
Masaya Yoshino, Gigaphoton, Inc. (Japan)
Hiroaki Nakarai, Gigaphoton, Inc. (Japan)
Takeshi Ohta, Gigaphoton, Inc. (Japan)
Hitoshi Nagano, Gigaphoton, Inc. (Japan)
Hiroshi Umeda, Gigaphoton, Inc. (Japan)
Yasufumi Kawasuji, Gigaphoton, Inc. (Japan)
Toru Abe, Gigaphoton, Inc. (Japan)
Ryoichi Nohdomi, Gigaphoton, Inc. (Japan)
Toru Suzuki, Gigaphoton, Inc. (Japan)
Satoshi Tanaka, Gigaphoton, Inc. (Japan)
Yukio Watanabe, Gigaphoton, Inc. (Japan)
Taku Yamazaki, Gigaphoton, Inc. (Japan)
Shinji Nagai, Gigaphoton, Inc. (Japan)
Osamu Wakabayashi, Gigaphoton, Inc. (Japan)
Takashi Matsunaga, Gigaphoton, Inc. (Japan)
Kouji Kakizaki, Gigaphoton, Inc. (Japan)
Junichi Fujimoto, Gigaphoton, Inc. (Japan)
Hakaru Mizoguchi, Gigaphoton, Inc. (Japan)


Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

© SPIE. Terms of Use
Back to Top