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Proceedings Paper

Single photon counting Geiger mode InGaAs(P)/InP avalanche photodiode arrays for 3D imaging
Author(s): Rengarajan Sudharsanan; Ping Yuan; Joseph Boisvert; Paul McDonald; Takahiro Isshiki; Shoghig Mesropian; Ed Labios; Michael Salisbury
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Paper Abstract

We have designed, fabricated and characterized InGaAs/InP Geiger-mode avalanche photodiode (APD) 32 x 32 arrays optimized for operation at both 1.06 and 1.55 μm wavelengths Single element devices with a thick multiplication layer thickness showed dark count rate as low as 60 kHz at a 3 V overbias, while photon detection efficiencies at a wavelength of 1.55 μm exceed 30% at 2 V overbias. Back illuminated 32 x 32 detector arrays exhibited breakdown uniformity of greater than 97% and excellent dark current uniformity. Detector arrays were integrated with low-noise read-out integrated circuits for an imaging demonstration. 3D imaging was demonstrated using 1.06 micron detector arrays.

Paper Details

Date Published: 16 April 2008
PDF: 9 pages
Proc. SPIE 6950, Laser Radar Technology and Applications XIII, 69500N (16 April 2008); doi: 10.1117/12.778278
Show Author Affiliations
Rengarajan Sudharsanan, Boeing Spectrolab, Inc. (United States)
Ping Yuan, Boeing Spectrolab, Inc. (United States)
Joseph Boisvert, Boeing Spectrolab, Inc. (United States)
Paul McDonald, Boeing Spectrolab, Inc. (United States)
Takahiro Isshiki, Boeing Spectrolab, Inc. (United States)
Shoghig Mesropian, Boeing Spectrolab, Inc. (United States)
Ed Labios, Boeing Spectrolab, Inc. (United States)
Michael Salisbury, Boeing SVS, Inc. (United States)


Published in SPIE Proceedings Vol. 6950:
Laser Radar Technology and Applications XIII
Monte D. Turner; Gary W. Kamerman, Editor(s)

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