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Proceedings Paper

Quantum 1/f noise in all-epitaxial metal-semiconductor diodes
Author(s): Peter H. Handel
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Paper Abstract

The physics, the theory and the engineering formulas of 1/f noise in ErAs-based all-epitaxial Schottky diodes are presented in a way related to the general quanum 1/f noise formulas developed by the author and van der Ziel ealier for pn junctions, but with inclusion of the image force contribution of an electron at the metal-semiconductor interface. On this base the phase noise introduced by mixers constructed with the ErAs Schottky diodes was also studied and can now be calculated analytically with the Quantum 1/f effect formulas.

Paper Details

Date Published: 15 April 2008
PDF: 8 pages
Proc. SPIE 6949, Terahertz for Military and Security Applications VI, 69490F (15 April 2008); doi: 10.1117/12.778114
Show Author Affiliations
Peter H. Handel, Univ. of Missouri, St. Louis (United States)


Published in SPIE Proceedings Vol. 6949:
Terahertz for Military and Security Applications VI
James O. Jensen; Hong-Liang Cui; Dwight L. Woolard; R. Jennifer Hwu, Editor(s)

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