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Proceedings Paper

High-speed transparent flexible electronics
Author(s): Jarrod Vaillancourt; Xuejun Lu; Xuliang Han; Daniel C. Janzen; Wu-Sheng Shih
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Paper Abstract

A high-speed flexible transistor made with an ultrapure carbon nanotube (CNT) solution is reported. The carrier transport layer of the CNT-based flexible transistor is formed at room temperature by dispensing a tiny droplet of an electronics-grade CNT solution. Ultra high field-effect mobility of ~ 48,000 cm2/(V×s) has been demonstrated on a thin-film field effect transistor (TFT). A simple trans-impedance voltage follower circuit was made using the CNT-TFT on a transparency film. The circuit exhibited a high modulation speed of 312 MHz and a large current-carrying capacity beyond 20 mA. The transparency and the sheet resistance of the CNT-film were also characterized at different wavelengths. The ink-jet printing-compatible process would enable mass production of large-area electronic circuits on virtually any desired flexible substrate at low cost and high throughput.

Paper Details

Date Published: 1 May 2008
PDF: 6 pages
Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69403A (1 May 2008); doi: 10.1117/12.777348
Show Author Affiliations
Jarrod Vaillancourt, Univ. of Massachusetts/Lowell (United States)
Xuejun Lu, Univ. of Massachusetts/Lowell (United States)
Xuliang Han, Brewer Science, Inc. (United States)
Daniel C. Janzen, Brewer Science, Inc. (United States)
Wu-Sheng Shih, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 6940:
Infrared Technology and Applications XXXIV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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