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Proceedings Paper

Porous silicon near room temperature nanosensor covered by TiO2 or ZnO thin films
Author(s): Vladimir M. Aroutiounian; Valery M. Arakelyan; Vardan Galstyan; Khachatur Martirosyan; Patrick Soukiassian
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Paper Abstract

Hydrogen nanosensor working near room temperature made of porous silicon covered by the TiO2-x or ZnO thin film was realized. Porous silicon layer was formed by electrochemical anodization on a p- and n-type silicon surface. Thereafter, n-type TiO2-x and ZnO thin films were deposited onto the porous silicon surface by electron-beam evaporation and magnetron sputtering, respectively. Platinum catalytic layer and gold electric contacts were for further measurements deposited onto obtained structures by ion-beam sputtering. The sensitivity of manufactured structures to 1000-5000 ppm of hydrogen was studied. Results of measurements showed that it is possible to realize a hydrogen nanosensor which has relatively high sensitivity and selectivity to hydrogen, durability, and short recovery and response times. Such a sensor can also be a part of silicon integral circuit and work near room temperatures.

Paper Details

Date Published: 28 April 2008
PDF: 8 pages
Proc. SPIE 6943, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense VII, 69430H (28 April 2008); doi: 10.1117/12.777345
Show Author Affiliations
Vladimir M. Aroutiounian, Yerevan State Univ. (Armenia)
Valery M. Arakelyan, Yerevan State Univ. (Armenia)
Vardan Galstyan, Yerevan State Univ. (Armenia)
Khachatur Martirosyan, Yerevan State Univ. (Armenia)
Patrick Soukiassian, Commissariat a l'Energie Atomique, Lab. SIMA, Univ. de Paris-Sud/Orsay (France)


Published in SPIE Proceedings Vol. 6943:
Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense VII
Edward M. Carapezza, Editor(s)

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