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Proceedings Paper

GaSb/InAsSb heterostructure MWIR detector for high temperature operation
Author(s): Y. Sharabani; Y. Paltiel; A. Sher; A. Raizman; A. Zussman
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Paper Abstract

InAsSb is a promising material for high operating temperature MWIR detectors. InAsSb p-n junction detectors dark current is g-r limited in the lower temperature range and diffusion limited in the higher ones. In this work we have investigated the properties GaSb / InAs0.91Sb0.09 heterostructure and its performance as a sensitive MWIR photodetector. The heterostructure was obtained by MOCVD growth of lattice matched, unintentionally doped layer of InAsSb on NGaSb substrate. This rectifying N-n heterostructure has the unique type II broken gap interface. I-V and spectral response were measured at various temperatures in the range 20-300 K. The BLIP temperature was found to be 180 K. R0A product of 2.5 and 180 Ω•cm2 were measured at 300 and 180 K, respectively. Dual color detection was demonstrated. The range of spectral response, due to light absorption in GaSb or in InAsSb can be determined by the applied bias. An optical gain larger than one was observed at temperatures below 120 K. High detectivity values of 1.3•1010 and 4.9•109cm•Hz1/2W-1 at 180 and 300 K respectively were measured.

Paper Details

Date Published: 15 April 2008
PDF: 12 pages
Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69400D (15 April 2008); doi: 10.1117/12.777339
Show Author Affiliations
Y. Sharabani, Soreq Nuclear Research Ctr. (Israel)
Y. Paltiel, Soreq Nuclear Research Ctr. (Israel)
A. Sher, Soreq Nuclear Research Ctr. (Israel)
A. Raizman, Soreq Nuclear Research Ctr. (Israel)
A. Zussman, Soreq Nuclear Research Ctr. (Israel)


Published in SPIE Proceedings Vol. 6940:
Infrared Technology and Applications XXXIV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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