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Proceedings Paper

Advances in high-brightness semiconductor lasers
Author(s): M. L. Osowski; W. Hu; R. M. Lammert; S. W. Oh; P. T. Rudy; T. Stakelon; L. Vaissie; J. E. Ungar
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Paper Abstract

We present recent advances in high power semiconductor laser bars and arrays at near infrared and eye-safe wavelengths. We report on increased spectral brightness with internal gratings to narrow and stabilize the spectrum and increased spatial brightness in multimode and single mode devices. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.

Paper Details

Date Published: 14 April 2008
PDF: 8 pages
Proc. SPIE 6952, Laser Source Technology for Defense and Security IV, 695208 (14 April 2008); doi: 10.1117/12.777065
Show Author Affiliations
M. L. Osowski, QPC Lasers, Inc. (United States)
W. Hu, QPC Lasers, Inc. (United States)
R. M. Lammert, QPC Lasers, Inc. (United States)
S. W. Oh, QPC Lasers, Inc. (United States)
P. T. Rudy, QPC Lasers, Inc. (United States)
T. Stakelon, QPC Lasers, Inc. (United States)
L. Vaissie, QPC Lasers, Inc. (United States)
J. E. Ungar, QPC Lasers, Inc. (United States)

Published in SPIE Proceedings Vol. 6952:
Laser Source Technology for Defense and Security IV
Mark Dubinskii; Gary L. Wood, Editor(s)

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