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Proceedings Paper

Influence of shot noise on CDU with DUV, EUV, and E-beam
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Paper Abstract

A theoretical analysis to estimate the effect of shot noise on CDU is induced from optical imaging perspectives combined with quantum theory, and is studied for 193-nm, EUV, and electron beam lithography. We found the CDU variation from shot noise is related to the number of particles absorbed in the printed area and to the image log slope (ILS). Hence, the CDU variation contributed by shot noise gets worse when the technology node advances from 45- to 32-, 22-, and 15-nm, EUV with higher ILS is no exception. For e-beam lithography, we are interested in the values of ILS calculated from array structures with different pitches, backscattering, wafer-stage movement, and raster-scan writing.

Paper Details

Date Published: 17 March 2008
PDF: 8 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69241K (17 March 2008); doi: 10.1117/12.776776
Show Author Affiliations
Zhih-Yu Pan, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chun-Kuang Chen, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Tsai-Sheng Gau, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Burn J. Lin, Taiwan Semiconductor Manufacturing Co. (Taiwan)


Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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