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Proceedings Paper

Hybrid Hopkins-Abbe method for modeling oblique angle mask effects in OPC
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Paper Abstract

A new method for the simulation of diffraction limited images is presented that is suitable for application in optical proximity correction and verification, where fast execution is critical. The method is given the name hybrid Hopkins-Abbe, because it is literally a hybrid of Hopkins' and Abbe's diffraction theories. The hybrid Hopkin--Abbe method resolves the problem of the traditional Hopkins theory, namely the requirement for constant mask diffraction efficiencies. Simulation of electromagnetic scattering from the mask that takes into account the oblique angles of incidence from the illumination is performed by application of the domain decomposition method that is extended for offaxis illumination. Examples of 45nm and 32nm lines and spaces through pitch and through focus are presented to demonstrate the validity and accuracy of the hybrid Hopkins-Abbe method. The results obtained are in excellent agreement with a rigorous and independent (third party) simulator. Other aspects of hybrid Hopkins-Abbe method relevant to OPC application are also discussed.

Paper Details

Date Published: 20 March 2008
PDF: 12 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69241E (20 March 2008); doi: 10.1117/12.776731
Show Author Affiliations
Konstantinos Adam, Mentor Graphics Corp. (United States)
Michael C. Lam, Mentor Graphics Corp. (United States)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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