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Proceedings Paper

Roles of substrate and film properties upon remnant polarisation and coercive field of ferroelectric thin film memory
Author(s): I. Pane; J. E. Huber
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Paper Abstract

The performance of ferroelectric random access memory devices (FeRAM) relies on the remnant polarisation. For high performance, the remnant polarisation of a ferroelectric thin film memory capacitor is desired to be as great as possible. However, the remnant polarisation in thin film form is typically only a third to a half of its bulk value. The coercive field is also several times greater in a thin film than in its bulk counterpart. A theoretical work is carried out in this study to explore the roles played by substrate and ferroelectric properties in altering the remnant polarisation. A constitutive law based on the crystal plasticity theory and the finite element method are used to model the ferroelectric switching behavior of a memory capacitor. In particular, it is found that factors such as crystallographic orientation and the initial volume fractions of ferroelectric variants, that are dependent on the type of substrate and film deposition method, can significantly alter the achievable remnant polarisation. An explanation of these dependencies is given, suggesting approaches to the problem of increasing the remnant polarisation of a thin film memory capacitor.

Paper Details

Date Published: 3 April 2008
PDF: 11 pages
Proc. SPIE 6926, Modeling, Signal Processing, and Control for Smart Structures 2008, 69260Z (3 April 2008); doi: 10.1117/12.776019
Show Author Affiliations
I. Pane, Bandung Institute of Technology (Indonesia)
J. E. Huber, Univ. of Oxford (United Kingdom)


Published in SPIE Proceedings Vol. 6926:
Modeling, Signal Processing, and Control for Smart Structures 2008
Douglas K. Lindner, Editor(s)

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