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Proceedings Paper

Reverse polarization switching in ferroelectric lead zirconate titanate (PZT) thin films
Author(s): William S. Oates
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Paper Abstract

The effect of shear stress on polarization retention in ferroelectric thin films was assessed using a nonlinear finite element phase field model. It is shown that reverse switching can occur when tetragonal phase films are grown in the <111> orientation. The effect of a substrate and a top electrode are modeled by applying rigid constraints and shear loads to the finite element phase field model to predict the evolution of ferroelectric domain structures. The residual shear stress in the film is shown to increase when the film is rigidly clamped to a substrate. When shear stress is applied to the top surface of the thin film model, 90° domain walls move in the direction of shear loading. Model predictions are found to qualitatively correlate with piezoelectric response microscopy experiments given in the literature.

Paper Details

Date Published: 23 April 2008
PDF: 10 pages
Proc. SPIE 6929, Behavior and Mechanics of Multifunctional and Composite Materials 2008, 69290C (23 April 2008); doi: 10.1117/12.775838
Show Author Affiliations
William S. Oates, Florida A&M Univ. (United States)
Florida State Univ. (United States)


Published in SPIE Proceedings Vol. 6929:
Behavior and Mechanics of Multifunctional and Composite Materials 2008
Marcelo J. Dapino; Zoubeida Ounaies, Editor(s)

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