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Proceedings Paper

Non-topcoat resist design for immersion process at 32-nm node
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Paper Abstract

At the 32nm node, the most important issue for mass production in immersion lithography is defectivity control. Many methods have been studied to reduce post-exposure immersion defects. Although a topcoat process demonstrates good immersion defect prevention, a topcoat-less resist process is an attractive candidate for immersion lithography due to cost reduction from a simplified process. In this paper we took the innovative approach of chemically designing an internal self-assembling barrier material that creates a thin embedded layer which functions as a topcoat. Data will be presented on this novel self assembly concept, illustrating the control of leaching, contact angle and immersion defects. Several optimized process flows with non-topcoat resists were also studied to decrease the amount of immersion defects. This study was used to verify the capability of a topcoat-less immersion process to achieve the low-defectivity levels required for 32nm node production.

Paper Details

Date Published: 31 March 2008
PDF: 14 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692307 (31 March 2008); doi: 10.1117/12.775542
Show Author Affiliations
Steven Wu, United Microelectronics Corp. (Taiwan)
Aroma Tseng, United Microelectronics Corp. (Taiwan)
Bill Lin, United Microelectronics Corp. (Taiwan)
Chun Chi Yu, United Microelectronics Corp. (Taiwan)
Bo-Jou Lu, United Microelectronics Corp. (Taiwan)
Wen-Shiang Liao, United Microelectronics Corp. (Taiwan)
Deyan Wang, Rohm and Haas Electronic Materials (United States)
Vaishali Vohra, Rohm and Haas Electronic Materials (United States)
Cheng Bai Xu, Rohm and Haas Electronic Materials (United States)
Stefan Caporale, Rohm and Haas Electronic Materials (United States)
George Barclay, Rohm and Haas Electronic Materials (United States)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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