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Proceedings Paper

Challenges of implementing contour modeling in 32nm technology
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Paper Abstract

Optical Proximity Correction (OPC) Model Calibration has required an increasing number of measurements as the critical dimension tolerances have gotten smaller. Measurement of two dimensional features have been increasing at a faster rate than features with one dimensional character as the technologies require better accuracy in the OPC models for line-end pull-back and corner rounding. New techniques are becoming available from metrology tool manufacturers to produce GDSII contours of shapes from wafers and modeling software has been improved to use these contours. The challenges of implementing contour generation from the SEM tools will be discussed including calibration methods, physical dimensions, algorithm derivations, and contour registration, resolution, scan direction, and parameter space coverage.

Paper Details

Date Published: 22 March 2008
PDF: 12 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69220A (22 March 2008); doi: 10.1117/12.775444
Show Author Affiliations
Daniel Fischer, IBM Systems and Technology Group (United States)
Geng Han, IBM Systems and Technology Group (United States)
James Oberschmidt, IBM Systems and Technology Group (United States)
Yong Wah Cheng, Chartered Semiconductor Manufacturing (United States)
Jae Yeol Maeng, Samsung Electronics Co. (United States)
Charles Archie, IBM Systems and Technology Group (United States)
Wei Lu, IBM Systems and Technology Group (United States)
Cyrus Tabery, Advanced Micro Devices (United States)


Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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