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Proceedings Paper

Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates
Author(s): J. Tatebayashi; A. Jallipalli; M. N. Kutty; S. H. Huang; N. Nuntawong; G. Balakrishnan; L. R. Dawson; D. L. Huffaker
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Paper Abstract

We report the formation and growth characteristics of an interfacial misfit (IMF) array between AlSb and Si and their application to III-Sb based quantum well (QW) light-emitting devices including edge-emitting laser diodes and verticalcavity surface emitting lasers (VCSELs) monolithically grown on a Si (001) substrate. A III-Sb epi-structure is grown monolithically on the Si substrate via a thin (≅50 nm) AlSb nucleation layer. A 13% lattice mismatch between AlSb and Si is accommodated by using the IMF array. We demonstrate monolithic VCSELs grown on Si(001) substrates operating under room-temperature with optically-pumped conditions. A 3-mm pump spot size results in peak threshold excitation density of Ith= 0.1 mJ/cm2 and a multimode lasing spectrum peak at 1.62 μm. Moreover, broad-area edgeemitters consisting of GaSb/AlGaSb QWs are demonstrated under pulsed conditions at 77K with a threshold current density of ≅2 kA/cm2 and a maximum peak output power of ≅20 mW for a 1mm-long device. A use of 5° miscut Si substrates enables both IMF formation and suppression of an anti-phase domain, resulting in a drastic suppression of dislocation density over the III-Sb epi-layer and realization of electrically-injected laser diodes operating at 77 K. The current-voltage (I-V) characteristics indicate a diode turn-on of 0.7 V, which is consistent with a theoretical built-in potential of the laser diode. This device is characterized by a 9.1 Ω forward resistance and a leakage current density of 0.7 A/cm2 at -5 V and 46.9 A/cm2 at -15 V. This IMF technique will enable the realization of III-Sb based electrically injected VCSELs operating at the fiber-optic communication wavelength monolithically grown on a Si platform.

Paper Details

Date Published: 5 February 2008
PDF: 13 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090M (5 February 2008); doi: 10.1117/12.775340
Show Author Affiliations
J. Tatebayashi, Univ. of California, Los Angeles (United States)
A. Jallipalli, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
M. N. Kutty, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
S. H. Huang, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
N. Nuntawong, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
G. Balakrishnan, Univ. of California, Los Angeles (United States)
L. R. Dawson, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
D. L. Huffaker, Univ. of California, Los Angeles (United States)
Ctr. for High Technology Materials, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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