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Proceedings Paper

Short-wavelength quantum cascade lasers
Author(s): Dmitry G. Revin; Shiyong Zhang; Matthew J. Steer; Robert J. Airey; Andrey B. Krysa; Mark Hopkinson; Luke R. Wilson; Stefan Menzel; John W. Cockburn
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Paper Abstract

We report the first realization of short wavelength (λ ~ 3.05 - 3.6 μm) lattice matched In0.53Ga0.47As/AlAs0.56Sb0.44/InP quantum cascade lasers (QCLs). The highest-performance device (λ ~ 3.6μm) displays pulsed laser action for temperatures up to 300 K. The shortest wavelength QCL (λ ≈ 3.05 μm) operates in pulsed mode at temperatures only up to 110 K. The first feasibility study of the strain compensated InGaAs/AlAsSb/InP QCLs (λ ~ 4.1 μm) proves that the lasers with increased indium fractions in the InGaAs quantum wells of 60 and 70% display no degradation compared with the lattice matched devices having identical design. This strain compensated system, being of particular interest for QCLs at λ <~ 3.5μm, provides increased energy separation between the Γ and X conduction band minima in the quantum wells, thus decreasing possible carrier leakage from the upper laser levels by intervalley scattering. We also demonstrate that the performance of strain compensated InGaAs/AlAsSb QCLs can be improved if AlAsSb barriers in the QCL active region are replaced by AlAs layers. The introduction of AlAs is intended to help suppress compositional fluctuations due to inter diffusion at the quantum well/barrier interfaces.

Paper Details

Date Published: 29 January 2008
PDF: 8 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090V (29 January 2008); doi: 10.1117/12.775316
Show Author Affiliations
Dmitry G. Revin, Univ. of Sheffield (United Kingdom)
Shiyong Zhang, Univ. of Sheffield (United Kingdom)
Matthew J. Steer, Univ. of Sheffield (United Kingdom)
Robert J. Airey, Univ. of Sheffield (United Kingdom)
Andrey B. Krysa, Univ. of Sheffield (United Kingdom)
Mark Hopkinson, Univ. of Sheffield (United Kingdom)
Luke R. Wilson, Univ. of Sheffield (United Kingdom)
Stefan Menzel, Univ. of Sheffield (United Kingdom)
John W. Cockburn, Univ. of Sheffield (United Kingdom)

Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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