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Proceedings Paper

Current transport modeling in carbon nanotube field effect transistors (CNT-FETs) and bio-sensing applications
Author(s): Jose M. Marulanda; Ashok Srivastava; Ashwani K. Sharma
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Paper Abstract

Current transport in carbon nanotube field effect transistors (CNT-FETs) has been modeled from charge distributions and the potential inside the carbon nanotube. Analytical equations describing I-V characteristics of the CNT-FETs have been obtained from the combination of diffusion and drift mechanisms in the channel region for normal and sub-threshold operations. It is shown that the electronic transport in semiconducting single-walled carbon nanotubes and field effect transistors can provide better understanding of their bio- and chemical sensing for the detection of traces of agents at molecular levels.

Paper Details

Date Published: 26 March 2008
PDF: 12 pages
Proc. SPIE 6931, Nanosensors and Microsensors for Bio-Systems 2008, 693108 (26 March 2008); doi: 10.1117/12.775181
Show Author Affiliations
Jose M. Marulanda, Louisiana State Univ. (United States)
Ashok Srivastava, Louisiana State Univ. (United States)
Ashwani K. Sharma, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 6931:
Nanosensors and Microsensors for Bio-Systems 2008
Vijay K. Varadan, Editor(s)

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