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Proceedings Paper

A calibrated photoresist model for pattern prediction
Author(s): Yung Long Hung; Chun Cheng Liao; Chiang-Lin Shih; John J. Biafore; Stewart A. Robertson
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Paper Abstract

As design rules shrink, the goal for model-based OPC/RET schemes is to minimize the discrepancy between the intended pattern and the printed pattern, particularly among 2d structures. Errors in the OPC design often result from insufficient model calibration across the parameter space of the imaging system and the focus-exposure process window. Full-chip simulations can enable early detection of hotspots caused by OPC/RET errors, but often these OPC model simulations have calibration limitations that result in undetected critical hotspots which limit the process window and yield. Also, as manufacturing processes are improved to drive yield enhancement, and are transferred to new facilities, the lithography tools and processes may differ from the original process used for OPC/RET model calibration conditions, potentially creating new types of hotspots in the patterned layer. In this work, we examine the predictive performance of rigorous physics-based 193 nm resist models in terms of portability and extrapolative accuracy. To test portability, the performance of a physical model calibrated using 1d data from a development facility will be quantified using 1d and 2d hotspot data generated at a different manufacturing facility with a production attenuated-PSM lithography process at k1 < 0.4. To test extrapolative accuracy, a similar test will be conducted using data generated at the manufacturing facility with illumination conditions which differ significantly from the original calibration conditions. Simulations of post-OPC process windows will be used to demonstrate application of calibrated physics-based resist models in hotspot characterization and mitigation.

Paper Details

Date Published: 15 April 2008
PDF: 10 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692332 (15 April 2008); doi: 10.1117/12.774876
Show Author Affiliations
Yung Long Hung, Nanya Technology Corp. (Taiwan)
Chun Cheng Liao, Nanya Technology Corp. (Taiwan)
Chiang-Lin Shih, Nanya Technology Corp. (Taiwan)
John J. Biafore, KLA-Tencor Corp. (United States)
Stewart A. Robertson, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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