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Proceedings Paper

Evaluating diffraction based overlay metrology for double patterning technologies
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Paper Abstract

Demanding sub-45 nm node lithographic methodologies such as double patterning (DPT) pose significant challenges for overlay metrology. In this paper, we investigate scatterometry methods as an alternative approach to meet these stringent new metrology requirements. We used a spectroscopic diffraction-based overlay (DBO) measurement technique in which registration errors are extracted from specially designed diffraction targets for double patterning. The results of overlay measurements are compared to traditional bar-in-bar targets. A comparison between DBO measurements and CD-SEM measurements is done to show the correlation between the two approaches. We discuss the total measurement uncertainty (TMU) requirements for sub-45 nm nodes and compare TMU from the different overlay approaches.

Paper Details

Date Published: 22 March 2008
PDF: 12 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69220C (22 March 2008); doi: 10.1117/12.774736
Show Author Affiliations
Chandra Saru Saravanan, Nanometrics, Inc. (United States)
Yongdong Liu, Nanometrics, Inc. (United States)
Prasad Dasari, Nanometrics, Inc. (United States)
Oleg Kritsun, Advanced Micro Devices, Inc. (United States)
Catherine Volkman, Advanced Micro Devices, Inc. (United States)
Alden Acheta, Advanced Micro Devices, Inc. (United States)
Bruno La Fontaine, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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