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Proceedings Paper

Characterization of CD-SEM metrology for iArF photoresist materials
Author(s): Benjamin Bunday; Aaron Cordes; N. G. Orji; Emil Piscani; Dan Cochran; Jeff Byers; John Allgair; Bryan J. Rice; Yohanan Avitan; Ram Peltinov; Maayan Bar-zvi; Ofer Adan
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Paper Abstract

For many years, lithographic resolution has been the main obstacle for keeping the pace of transistor densification to meet Moore's Law. For the 45 nm node and beyond, new lithography techniques are being considered, including immersion ArF lithography (iArF) and extreme ultraviolet (EUV) lithography. As in the past, these techniques will use new types of photoresists with the capability to print 45 nm node (and beyond) feature widths and pitches. In a previous paper ("SEM Metrology for Advanced Lithographies," Proc SPIE, v6518, 65182B, 2007), we compared the effects of several types of resists, ranging from deep ultraviolet (DUV) (248 nm) through ArF (193 nm) and iArF to extreme UV (EUV, 13.5 nm). iArF resists were examined, and the results from the available resist sample showed a tendency to shrink in the same manner as the ArF resist but at a lower magnitude. This paper focuses on variations of iArF resists (different chemical formulations and different lithographic sensitivities) and examine new developments in iArF resists during the last year. We characterize the resist electron beam induced shrinkage behavior under scanning electron microscopy (SEM) and evaluate the shrinkage magnitude on mature resists as well as R&D resists. We conclude with findings on the readiness of SEM metrology for these challenges.

Paper Details

Date Published: 24 March 2008
PDF: 17 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221A (24 March 2008); doi: 10.1117/12.774317
Show Author Affiliations
Benjamin Bunday, International SEMATECH Manufacturing Initiative (United States)
Aaron Cordes, International SEMATECH Manufacturing Initiative (United States)
N. G. Orji, National Institute of Standards and Technology (United States)
Emil Piscani, SEMATECH, Inc. (United States)
Dan Cochran, SEMATECH, Inc. (United States)
Jeff Byers, SEMATECH, Inc. (United States)
John Allgair, International SEMATECH Manufacturing Initiative (United States)
Bryan J. Rice, SEMATECH, Inc. (United States)
Yohanan Avitan, Applied Materials (Israel)
Ram Peltinov, Applied Materials (Israel)
Maayan Bar-zvi, Applied Materials (Israel)
Ofer Adan, Applied Materials (Israel)

Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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