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Proceedings Paper

30nm half-pitch metal patterning using Moti CD shrink technique and double patterning
Author(s): Janko Versluijs; J.-F. De Marneffe; Danny Goossens; Maaike Op de Beeck; Tom Vandeweyer; Vincent Wiaux; Herbert Struyf; Mireille Maenhoudt; Mohand Brouri; Johan Vertommen; Ji Soo Kim; Helen Zhu; Reza Sadjadi
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Paper Abstract

Double patterning lithography appears a likely candidate to bridge the gap between water-based immersion lithography and EUV. A double patterning process is discussed for 30nm half-pitch interconnect structures, using 1.2 NA immersion lithography combined with the MotifTM CD shrink technique. An adjusted OPC calculation is required to model the proximity effects of the Motif shrink technique and subsequent metal hard mask (MHM) etch, on top of the lithography based proximity effects. The litho-etch-litho-etch approach is selected to pattern a TiN metal hard mask. This mask is then used to etch the low-k dielectric. The various process steps and challenges encountered are discussed, with the feasibility of this approach demonstrated by successfully transferring a 30nm half-pitch pattern into the MHM.

Paper Details

Date Published: 1 April 2008
PDF: 9 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69242C (1 April 2008); doi: 10.1117/12.774139
Show Author Affiliations
Janko Versluijs, IMEC vzw (Belgium)
J.-F. De Marneffe, IMEC vzw (Belgium)
Danny Goossens, IMEC vzw (Belgium)
Maaike Op de Beeck, IMEC vzw (Belgium)
Tom Vandeweyer, IMEC vzw (Belgium)
Vincent Wiaux, IMEC vzw (Belgium)
Herbert Struyf, IMEC vzw (Belgium)
Mireille Maenhoudt, IMEC vzw (Belgium)
Mohand Brouri, Lam Research Corp. (Belgium)
Johan Vertommen, Lam Research Corp. (Belgium)
Ji Soo Kim, Lam Research Corp. (United States)
Helen Zhu, Lam Research Corp. (United States)
Reza Sadjadi, Lam Research Corp. (United States)


Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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