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Proceedings Paper

Contamination specification for dimensional metrology SEMs
Author(s): András E. Vladár; K. P. Purushotham; Michael T. Postek
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Paper Abstract

Electron beam-induced contamination is one of the most bothersome problems encountered in the use of the scanning electron microscope (SEM). Even in "clean-vacuum" instruments it is possible that the image gradually darkens because a polymerized hydrocarbon layer with low secondary electron yield is deposited. This contamination layer can get so thick that it noticeably changes the size and shape of the small structures of current and future state-of-the art integrated circuits (ICs). Contamination greatly disturbs or hinders the measurement process and the erroneous results can lead to wrong process control decisions. NIST has developed cleaning procedures and a contamination specification that offer an effective and viable solution for this problem. By the acceptance, implementation and regular use of these methods it is possible to get rid of electron beam induced contamination.

Paper Details

Date Published: 25 March 2008
PDF: 5 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692217 (25 March 2008); doi: 10.1117/12.774015
Show Author Affiliations
András E. Vladár, National Institute of Standards and Technology (United States)
K. P. Purushotham, National Institute of Standards and Technology (United States)
Michael T. Postek, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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