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Proceedings Paper

Effect of interface polarization charge on the performance of nitride semiconductor light emitting diodes
Author(s): Hongen Shen; Meredith L. Reed; Eric D. Readinger; Michael Wraback
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Paper Abstract

Most III-V nitride light emitting diodes have an n-down structure with Ga polarity. In such a device, the active layer is grown on top of the n-cladding layer and the p-type cladding layer is grown on top of the active layer. We have analyzed the band structure of such a device and found a reduced effective conduction band barrier due to the positive spontaneous and piezoelectric polarization charge, resulting in large electron overshoot and necessitating the introduction of the commonly employed electron blocking layer. On the other hand, the polarization charge at the corresponding interface for a p-side down device with Ga polarity is negative, resulting in a significant enhancement of the electron barrier and the existence of a 2D hole gas near the interface. These are beneficial to the performance of single heterojunction LEDs.

Paper Details

Date Published: 22 February 2008
PDF: 8 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688905 (22 February 2008); doi: 10.1117/12.773871
Show Author Affiliations
Hongen Shen, U.S. Army Research Lab. (United States)
Meredith L. Reed, U.S. Army Research Lab. (United States)
Eric D. Readinger, U.S. Army Research Lab. (United States)
Michael Wraback, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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