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Proceedings Paper

Photons, electrons, and acid yields in EUV photoresists: a progress report
Author(s): Robert Brainard; Elsayed Hassanein; Juntao Li; Piyush Pathak; Brad Thiel; Franco Cerrina; Richard Moore; Miguel Rodriguez; Boris Yakshinskiy; Elena Loginova; Theodore Madey; Richard Matyi; Matt Malloy; Andrew Rudack; Patrick Naulleau; Andrea Wüest; Kim Dean
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Paper Abstract

This paper describes our initial investigation into building a greater understanding of the complex mechanism occurring during extreme ultraviolet (EUV) exposure of resist materials. In particular, we are focusing on the number and energy of photoelectrons generated and available for reaction with photoacid generators (PAGs). We propose that this approach will best enable the industry to develop resists capable of meeting resolution, line width roughness (LWR), and sensitivity requirements.

Paper Details

Date Published: 15 April 2008
PDF: 14 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692325 (15 April 2008); doi: 10.1117/12.773869
Show Author Affiliations
Robert Brainard, Univ. at Albany (United States)
Elsayed Hassanein, Univ. at Albany (United States)
Juntao Li, Univ. at Albany (United States)
Piyush Pathak, Univ. of Wisconsin, Madison (United States)
Brad Thiel, Univ. at Albany (United States)
Franco Cerrina, Univ. of Wisconsin, Madison (United States)
Richard Moore, Univ. at Albany (United States)
Miguel Rodriguez, Univ. at Albany (United States)
Boris Yakshinskiy, Rutgers Univ. (United States)
Elena Loginova, Rutgers Univ. (United States)
Theodore Madey, Rutgers Univ. (United States)
Richard Matyi, Univ. at Albany (United States)
Matt Malloy, SEMATECH (United States)
Andrew Rudack, SEMATECH (United States)
Patrick Naulleau, Univ. at Albany (United States)
Andrea Wüest, SEMATECH (United States)
Kim Dean, SEMATECH (United States)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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