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Proceedings Paper

Optical proximity correction for elongated contact-hole printing
Author(s): Young-Chang Kim; Sangwook Kim; Sungsoo Suh; Yongjin Cheon; Sukjoo Lee; Junghyeon Lee; Seong-Woon Choi; Woosung Han; Sooryong Lee; Kyoil Koo
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Paper Abstract

Optical proximity correction (OPC) of contact-hole printing is challenging since its two dimensional shapes requires through understanding of lithographic processes compared to one dimensional line and space pattering. Moreover, recently, it is common to use "elongated contact holes" with large contact area, rather than simple circular ones, for small electrical resistance. These elongated contact holes make it even more difficult to generate a good OPC model than the circular ones because the elongated contact-hole patterning causes the asymmetric process effects. For example, impacts of mask CD error, resist diffusion and resist development are different depending on the orientation of the elongated contact holes. This paper presents how the OPC model for the elongated contact-hole can be improved as the mask CD error compensation, accurate resist diffusion model and a new Variable Threshold Model (VTM) are applied for the asymmetric process effects.

Paper Details

Date Published: 12 March 2008
PDF: 11 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69243Q (12 March 2008); doi: 10.1117/12.773819
Show Author Affiliations
Young-Chang Kim, Samsung Electronics Co., Ltd. (South Korea)
Sangwook Kim, Samsung Electronics Co., Ltd. (South Korea)
Sungsoo Suh, Samsung Electronics Co., Ltd. (South Korea)
Yongjin Cheon, Samsung Electronics Co., Ltd. (South Korea)
Sukjoo Lee, Samsung Electronics Co., Ltd. (South Korea)
Junghyeon Lee, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woosung Han, Samsung Electronics Co., Ltd. (South Korea)
Sooryong Lee, Synopsys, Inc. (United States)
Kyoil Koo, Synopsys, Inc. (United States)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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